The SMBT3946DW1T1G is a 40V NPN bipolar junction transistor with a maximum collector current of 200mA. It operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 150mW. This lead-free device is available in a tape and reel packaging format. The SMBT3946DW1T1G is compliant with RoHS regulations and is not radiation hardened.
Sign in to ask questions about the Onsemi SMBT3946DW1T1G datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Onsemi SMBT3946DW1T1G technical specifications.
| Collector Emitter Breakdown Voltage | 40V |
| Collector-emitter Voltage-Max | 300mV |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 200mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 250MHz |
| RoHS | Compliant |
Download the complete datasheet for Onsemi SMBT3946DW1T1G to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
