NPN Bipolar Junction Transistor (BJT) in a SOT-23-3 package. Features a collector-emitter voltage (VCEO) of 40V, maximum collector current of 600mA, and a transition frequency of 300MHz. Offers a minimum hFE of 100 and a maximum power dissipation of 225mW. Operates across a temperature range of -55°C to 150°C. Packaged in a 3000-piece tape and reel.
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Onsemi SMMBT2222ALT1G technical specifications.
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | 75V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 1V |
| Emitter Base Voltage (VEBO) | 6V |
| Gain Bandwidth Product | 300MHz |
| Height | 1.11mm |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Length | 3.04mm |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 600mA |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 225mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q101 |
| Transition Frequency | 300MHz |
| Width | 2.64mm |
| RoHS | Compliant |
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