NPN Bipolar Junction Transistor (BJT) in a SOT-23-3 package. Features a 40V collector-emitter breakdown voltage and a maximum collector current of 600mA. Offers a transition frequency of 250MHz and a minimum hFE of 100. Operates across a temperature range of -55°C to 150°C with a power dissipation of 300mW. Packaged in a 3000-piece tape and reel, this RoHS compliant component is lead-free.
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Onsemi SMMBT4401LT1G technical specifications.
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 750mV |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 750mV |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 250MHz |
| Gain Bandwidth Product | 250MHz |
| Height | 1.01mm |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Length | 3.04mm |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 600mA |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 300mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 250MHz |
| Width | 1.4mm |
| RoHS | Compliant |
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