PNP Bipolar Junction Transistor (BJT) in a SOT-23-3 package. Features a maximum collector current of 600mA and a collector-emitter breakdown voltage of 40V. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 200MHz. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 300mW. Packaged on a 3000-piece tape and reel, this component is lead-free and RoHS compliant.
Frequency200MHz
PackageSOT-23-3
PolarityPNP
Quick Jump:
Technical Specifications
Onsemi SMMBT4403LT1G technical specifications.
General
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | -750mV |
| Collector-emitter Voltage-Max | 750mV |
| Emitter Base Voltage (VEBO) | -5V |
| Gain Bandwidth Product | 200MHz |
| Height | 1.01mm |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Length | 3.04mm |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 600mA |
| Max Frequency | 200MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| Width | 1.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi SMMBT4403LT1G Datasheet
Download the complete datasheet for Onsemi SMMBT4403LT1G to view detailed technical specifications.
No datasheet is available for this part.
Product Images
