PNP Bipolar Junction Transistor in SOT-23-3 package, featuring a maximum collector current of 500mA and a collector-emitter breakdown voltage of 150V. This component offers a minimum hFE of 60 and a transition frequency of 300MHz. Operating across a temperature range of -55°C to 150°C, it supports a maximum power dissipation of 300mW. The device is lead-free and RoHS compliant, supplied in a 3000-piece tape and reel.
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Onsemi SMMBT5401LT1G technical specifications.
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | -160V |
| Collector Emitter Breakdown Voltage | 150V |
| Collector Emitter Saturation Voltage | -200mV |
| Collector-emitter Voltage-Max | 500mV |
| Emitter Base Voltage (VEBO) | -5V |
| Gain Bandwidth Product | 100MHz |
| Height | 1.01mm |
| hFE Min | 60 |
| Lead Free | Lead Free |
| Length | 3.04mm |
| Max Breakdown Voltage | 150V |
| Max Collector Current | 500mA |
| Max Frequency | 300MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 300MHz |
| Width | 1.4mm |
| RoHS | Compliant |
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