The SMMBTA06WT1G is a NPN bipolar junction transistor with a collector-emitter breakdown voltage of 80V and a maximum collector current of 500mA. It has a gain bandwidth product of 100MHz and a maximum operating temperature of 150°C. The transistor is packaged in a small outline R-PDSO-G3 package and is lead-free and RoHS compliant. It is suitable for use in high-frequency applications and can operate over a temperature range of -55°C to 150°C.
PolarityNPN
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Technical Specifications
Onsemi SMMBTA06WT1G technical specifications.
General
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 250mV |
| Collector-emitter Voltage-Max | 250mV |
| Continuous Collector Current | 500mA |
| Emitter Base Voltage (VEBO) | 4V |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| Weight | 0.000219oz |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi SMMBTA06WT1G Datasheet
Download the complete datasheet for Onsemi SMMBTA06WT1G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.