PNP Bipolar Junction Transistor (BJT) in a SOT-23-3 package. Features a maximum collector current of 500mA and a collector-emitter breakdown voltage of 80V. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 50MHz. Operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 225mW. Packaged on a 3000-piece tape and reel, this component is lead-free and RoHS compliant.
Frequency100MHz
PackageSOT-23-3
PolarityPNP
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Technical Specifications
Onsemi SMMBTA56LT1G technical specifications.
General
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | -250mV |
| Collector-emitter Voltage-Max | 250mV |
| Emitter Base Voltage (VEBO) | -4V |
| Gain Bandwidth Product | 50MHz |
| Height | 1.11mm |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Length | 3.04mm |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 500mA |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 225mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 50MHz |
| Width | 2.64mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi SMMBTA56LT1G Datasheet
Download the complete datasheet for Onsemi SMMBTA56LT1G to view detailed technical specifications.
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