PNP Bipolar Junction Transistor in a SOT-23-3 package, offering a maximum collector current of 500mA and a collector-emitter breakdown voltage of 80V. Features a minimum hFE of 100 and a transition frequency of 50MHz. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 300mW. Supplied on a 10000-unit tape and reel, this lead-free and RoHS compliant component is ideal for various electronic applications.
Onsemi SMMBTA56LT3G technical specifications.
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | -80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | -250mV |
| Collector-emitter Voltage-Max | 250mV |
| Emitter Base Voltage (VEBO) | -4V |
| Gain Bandwidth Product | 50MHz |
| Height | 1.11mm |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Length | 3.04mm |
| Max Collector Current | 500mA |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | MMBTA56L |
| Transition Frequency | 50MHz |
| Weight | 0.050717oz |
| Width | 2.64mm |
| RoHS | Compliant |
No datasheet is available for this part.
