PNP Bipolar Junction Transistor (BJT) in a SOT-23-3 package. Features a 300V collector-emitter breakdown voltage (VCEO) and a 300V collector-base voltage (VCBO). Offers a maximum collector current of 500mA and a power dissipation of 300mW. Operates with a transition frequency of 50MHz and a minimum hFE of 25. Packaged on a 3000-piece tape and reel.
Frequency50MHz
PackageSOT-23-3
PolarityPNP
Power300mW
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Technical Specifications
Onsemi SMMBTA92LT1G technical specifications.
General
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | 300V |
| Collector Emitter Breakdown Voltage | 300V |
| Collector Emitter Saturation Voltage | -500mV |
| Collector Emitter Voltage (VCEO) | 300V |
| Collector-emitter Voltage-Max | 500mV |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 50MHz |
| Gain Bandwidth Product | 50MHz |
| Height | 1.11mm |
| hFE Min | 25 |
| Lead Free | Lead Free |
| Length | 3.04mm |
| Max Breakdown Voltage | 300V |
| Max Collector Current | 500mA |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 300mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 50MHz |
| Width | 2.64mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi SMMBTA92LT1G Datasheet
Download the complete datasheet for Onsemi SMMBTA92LT1G to view detailed technical specifications.
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