The SMMUN2116LT1G is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It is packaged in a SOT-23-3 package and is suitable for operating temperatures between -55°C and 150°C. This transistor is RoHS compliant and lead free. It has a maximum power dissipation of 246mW and a minimum current gain of 160.
PackageSOT-23-3
PolarityPNP
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Technical Specifications
Onsemi SMMUN2116LT1G technical specifications.
General
| Package/Case | SOT-23-3 |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 250mV |
| Halogen Free | Halogen Free |
| hFE Min | 160 |
| Lead Free | Lead Free |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 246mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | MMUN2116L |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi SMMUN2116LT1G Datasheet
Download the complete datasheet for Onsemi SMMUN2116LT1G to view detailed technical specifications.
No datasheet is available for this part.