The SMUN5114T3G is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It is packaged in a halogen-free, lead-free SOT-323 package and is available in quantities of 10,000 per reel. The transistor is rated for operation over a temperature range of -55°C to 150°C and has a maximum power dissipation of 202mW. It is RoHS compliant and suitable for use in a variety of applications.
Sign in to ask questions about the Onsemi SMUN5114T3G datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Onsemi SMUN5114T3G technical specifications.
| Package/Case | SOT-323 |
| Collector Emitter Breakdown Voltage | 50V |
| Collector-emitter Voltage-Max | 250mV |
| Halogen Free | Halogen Free |
| hFE Min | 80 |
| Lead Free | Lead Free |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 202mW |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| RoHS | Compliant |
Download the complete datasheet for Onsemi SMUN5114T3G to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
