The SMUN5211DW1T1G is a NPN transistor with a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It has a maximum power dissipation of 187mW and operates within a temperature range of -55°C to 150°C. The transistor is packaged in a halogen-free and lead-free SOT-363-6 package, available in quantities of 3000 on tape and reel. It is RoHS compliant and does not have radiation hardening.
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Onsemi SMUN5211DW1T1G technical specifications.
| Package/Case | SOT-363-6 |
| Collector Emitter Breakdown Voltage | 50V |
| Collector-emitter Voltage-Max | 250mV |
| Halogen Free | Halogen Free |
| hFE Min | 35 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 187mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| RoHS | Compliant |
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