The SMUN5312DW1T1G is a bipolar junction transistor with a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It is packaged in a SOT-363-6 package and is lead-free and RoHS compliant. The transistor has a minimum current gain of 60 and a maximum power dissipation of 187mW. It is available in tape and reel packaging with 3000 units per package.
PackageSOT-363-6
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Technical Specifications
Onsemi SMUN5312DW1T1G technical specifications.
General
| Package/Case | SOT-363-6 |
| Collector Emitter Breakdown Voltage | 50V |
| Collector-emitter Voltage-Max | 250mV |
| hFE Min | 60 |
| Lead Free | Lead Free |
| Max Collector Current | 100mA |
| Max Power Dissipation | 187mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi SMUN5312DW1T1G Datasheet
Download the complete datasheet for Onsemi SMUN5312DW1T1G to view detailed technical specifications.
No datasheet is available for this part.