
The SMUN5313DW1T1G is a bipolar junction transistor with a maximum collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It has a maximum power dissipation of 187mW and operates within a temperature range of -55°C to 150°C. The transistor is available in a SOT-363-6 package and is lead-free and RoHS compliant.
Sign in to ask questions about the Onsemi SMUN5313DW1T1G datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Onsemi SMUN5313DW1T1G technical specifications.
| Package/Case | SOT-363-6 |
| Collector Emitter Breakdown Voltage | 50V |
| Collector-emitter Voltage-Max | 250mV |
| Continuous Collector Current | 100mA |
| hFE Min | 80 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 187mW |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN, PNP |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Weight | 0.000265oz |
| RoHS | Compliant |
Download the complete datasheet for Onsemi SMUN5313DW1T1G to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
