The SPZT651T1G is a NPN bipolar junction transistor with a collector-emitter breakdown voltage of 60V and a maximum collector current of 2A. It has a maximum power dissipation of 800mW and is packaged in a lead-free SOT-223-4 package. The transistor operates over a temperature range of -65°C to 150°C and is RoHS compliant.
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| Package/Case | SOT-223-4 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector-emitter Voltage-Max | 500mV |
| Gain Bandwidth Product | 75MHz |
| Lead Free | Lead Free |
| Max Collector Current | 2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 800mW |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 75MHz |
| RoHS | Compliant |
These are design resources that include the Onsemi SPZT651T1G
Notice PD16210 detailing the transition from leaded to lead-free (RoHS compliant) versions of various ON Semiconductor components, including acquired Analog Devices products.
