NPN Epitaxial Silicon Transistor, 2000-FNFLD, designed for through-hole mounting in a TO-92-3 package. Features a maximum collector current of 1.5A and a collector-emitter voltage of 25V. Offers a minimum DC current gain (hFE) of 85 and a transition frequency of 100MHz. Operates across a temperature range of -65°C to 150°C with a maximum power dissipation of 1W. This RoHS compliant component is supplied in an ammo pack.
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Onsemi SS8050DTA technical specifications.
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 25V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 25V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | 1.5A |
| Emitter Base Voltage (VEBO) | 6V |
| Gain Bandwidth Product | 100MHz |
| Height | 4.58mm |
| hFE Min | 85 |
| Lead Free | Lead Free |
| Length | 4.58mm |
| Max Breakdown Voltage | 25V |
| Max Collector Current | 1.5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| DC Rated Voltage | 25V |
| Weight | 0.24g |
| Width | 3.86mm |
| RoHS | Compliant |
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