PNP Epitaxial Silicon Transistor for general-purpose amplification and switching. Features a -40V Collector Base Voltage (VCBO) and 30V Collector Emitter Breakdown Voltage. Offers a maximum collector current of 1.5A and a minimum DC current gain (hFE) of 85. Operates with a transition frequency of 200MHz and a maximum power dissipation of 1W. Packaged in TO-92 for through-hole mounting, this RoHS compliant component is supplied in bulk.
Frequency200MHz
PackageTO-92
Current Rating-1.5A
MountingThrough Hole
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Technical Specifications
Onsemi SS8550BBU technical specifications.
General
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | -40V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | -280mV |
| Collector Emitter Voltage (VCEO) | 25V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | -1.5A |
| Emitter Base Voltage (VEBO) | -6V |
| Frequency | 200MHz |
| Gain Bandwidth Product | 200MHz |
| hFE Min | 85 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 25V |
| Max Collector Current | 1.5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| DC Rated Voltage | -25V |
| Weight | 0.179g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi SS8550BBU Datasheet
Download the complete datasheet for Onsemi SS8550BBU to view detailed technical specifications.
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