SS8550CTA

PNP BJT Transistor, 25V, 1.5A, TO-92-3, 200MHz

PNP Epitaxial Silicon Transistor, TO-92-3 package. Features -40V Collector Base Voltage, -25V DC Rated Voltage, and 25V Collector Emitter Breakdown Voltage. Offers a maximum collector current of 1.5A and a minimum hFE of 85. Operates with a transition frequency of 200MHz and a maximum power dissipation of 1W. Through-hole mount, lead-free, and RoHS compliant.

Frequency1MHz

PackageTO-92-3

Current Rating-1.5A

MountingThrough Hole

Quick Jump:

Technical Specifications

Onsemi SS8550CTA technical specifications.

General

Package/Case	TO-92-3
Collector Base Voltage (VCBO)	-40V
Collector Emitter Breakdown Voltage	25V
Collector Emitter Saturation Voltage	-280mV
Collector-emitter Voltage-Max	500mV
Current Rating	-1.5A
Emitter Base Voltage (VEBO)	-6V
Gain Bandwidth Product	200MHz
Height	5.33mm
hFE Min	85
Lead Free	Lead Free
Length	5.2mm
Max Breakdown Voltage	25V
Max Collector Current	1.5A
Max Frequency	1MHz
Max Operating Temperature	150°C
Min Operating Temperature	-65°C
Max Power Dissipation	1W
Mount	Through Hole
Package Quantity	2000
Packaging	Ammo Pack
Polarity	PNP
Radiation Hardening	No
RoHS Compliant	Yes
Transition Frequency	200MHz
DC Rated Voltage	-25V
Weight	0.24g
Width	4.19mm