NPN Bipolar Junction Transistor (BJT) in a TO-92 package, designed for through-hole mounting. Features a maximum collector current of 30mA and a collector-emitter breakdown voltage of 30V. Offers a minimum DC current gain (hFE) of 28 and a transition frequency of 2MHz. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 400mW. This component is lead-free and RoHS compliant.
Frequency2MHz
PackageTO-92
Current Rating30mA
MountingThrough Hole
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Technical Specifications
Onsemi SS9011FBU technical specifications.
General
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 300mV |
| Current Rating | 30mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 2MHz |
| Gain Bandwidth Product | 2MHz |
| hFE Min | 28 |
| Lead Free | Lead Free |
| Max Collector Current | 30mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 400mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 400mW |
| RoHS Compliant | Yes |
| Series | SS9011 |
| Transition Frequency | 2MHz |
| DC Rated Voltage | 30V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi SS9011FBU Datasheet
Download the complete datasheet for Onsemi SS9011FBU to view detailed technical specifications.
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