The SSU1N60BTU is a N-CHANNEL MOSFET with a drain to source breakdown voltage of 600V and a continuous drain current of 900mA. It has a drain to source resistance of 12R and a power dissipation of 2.5W. The device is packaged in a rail/Tube package and is RoHS compliant. It operates over a temperature range of -55°C to 150°C, with a fall time of 35ns and a turn-off delay time of 25ns.
Resistance12R
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
Onsemi SSU1N60BTU technical specifications.
General
| Continuous Drain Current (ID) | 900mA |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 12R |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 70 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Resistance | 12R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 25ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi SSU1N60BTU Datasheet
Download the complete datasheet for Onsemi SSU1N60BTU to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.