The Onsemi TIG064E8-TL-H is a surface-mount insulated gate bipolar transistor with a collector-emitter breakdown voltage of 400V and a maximum collector-emitter voltage of 7V. It is available in a tape and reel package with 3000 units per reel. The device is RoHS compliant and not radiation hardened. It is suitable for use in a variety of applications, including those requiring high voltage and current handling.
PackageSMD/SMT
MountingSurface Mount
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Technical Specifications
Onsemi TIG064E8-TL-H technical specifications.
General
| Package/Case | SMD/SMT |
| Collector Emitter Breakdown Voltage | 400V |
| Collector-emitter Voltage-Max | 7V |
| Input Type | STANDARD |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | TIG064E8 |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi TIG064E8-TL-H Datasheet
Download the complete datasheet for Onsemi TIG064E8-TL-H to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.