
NPN Darlington transistor in TO-220AB package, featuring a 100V collector-emitter breakdown voltage and an 8A continuous collector current. This through-hole component offers a high DC current gain (hFE) of 1000 minimum and a maximum power dissipation of 80W. Operating temperature range is -65°C to 150°C, with a 2W max power dissipation at 25°C. RoHS compliant and lead-free.
Onsemi TIP102 technical specifications.
| Package/Case | TO-220AB |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 2.5V |
| Current Rating | 8A |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 9.4mm |
| hFE Min | 1000 |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Breakdown Voltage | 100V |
| Max Collector Current | 8A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 2W |
| Mount | Through Hole |
| Package Quantity | 200 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 80W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| Weight | 1.214g |
| Width | 4.83mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi TIP102 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
