NPN Darlington Bipolar Junction Transistor (BJT) in a TO-220AB package. Features 80V collector-emitter breakdown voltage, 60V collector-emitter voltage (VCEO), and 2A continuous collector current. Offers a minimum DC current gain (hFE) of 500 and a maximum power dissipation of 2W. Designed for through-hole mounting and operates within a temperature range of -65°C to 150°C.
PackageTO-220AB
Current Rating-8A
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi TIP110 technical specifications.
General
| Package/Case | TO-220AB |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 2.5V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 2.5V |
| Continuous Collector Current | 2A |
| Current Rating | -8A |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 500 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 2W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| DC Rated Voltage | -100V |
| Weight | 1.214g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi TIP110 Datasheet
Download the complete datasheet for Onsemi TIP110 to view detailed technical specifications.
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