NPN Darlington Bipolar Junction Transistor (BJT) for medium power applications. Features a 100V collector-emitter breakdown voltage and a 2A continuous collector current. Offers a maximum collector-emitter saturation voltage of 2.5V and a minimum hFE of 500. Packaged in a TO-220 through-hole mount with a maximum power dissipation of 50W. RoHS compliant and lead-free.
PackageTO-220
Current Rating2A
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi TIP110TU technical specifications.
General
| Package/Case | TO-220 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 2.5V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 2.5V |
| Current Rating | 2A |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 9.4mm |
| hFE Min | 500 |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 50W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | -100V |
| Weight | 1.214g |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi TIP110TU Datasheet
Download the complete datasheet for Onsemi TIP110TU to view detailed technical specifications.
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