NPN Epitaxial Silicon Darlington Transistor, 2A max collector current, 80V collector-emitter breakdown voltage, and 2.5V collector-emitter saturation voltage. Features a TO-220AB package for through-hole mounting, with a minimum hFE of 500. Operates from -65°C to 150°C, with 2W max power dissipation. This RoHS compliant component is lead-free.
PackageTO-220AB
Current Rating2A
MountingThrough Hole
PolarityNPN
Quick Jump:
Technical Specifications
Onsemi TIP111TU technical specifications.
General
| Package/Case | TO-220AB |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 2.5V |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 2.5V |
| Current Rating | 2A |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 16.51mm |
| hFE Min | 500 |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Collector Current | 2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 2W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 80V |
| Weight | 1.214g |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi TIP111TU Datasheet
Download the complete datasheet for Onsemi TIP111TU to view detailed technical specifications.
No datasheet is available for this part.