PNP Epitaxial Silicon Darlington Transistor featuring a -100V Collector Base Voltage and 100V Collector Emitter Breakdown Voltage. This through-hole component offers a maximum collector current of 2A and a minimum hFE of 500. It operates within a temperature range of -65°C to 150°C with a 2W power dissipation. The transistor is supplied in a TO-220-3 package and is RoHS compliant.
PackageTO-220-3
Current Rating-2A
MountingThrough Hole
PolarityPNP
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Technical Specifications
Onsemi TIP117TU technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | -100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 2.5V |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 2.5V |
| Current Rating | -2A |
| Emitter Base Voltage (VEBO) | -5V |
| hFE Min | 500 |
| Lead Free | Lead Free |
| Max Collector Current | 2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 2W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | -100V |
| Weight | 1.214g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi TIP117TU Datasheet
Download the complete datasheet for Onsemi TIP117TU to view detailed technical specifications.
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