
NPN bipolar junction transistor in TO-220 package, featuring a 60V collector-emitter breakdown voltage and a continuous collector current rating of 5A. This Darlington transistor offers a high DC current gain (hFE) of 1000 minimum and a maximum collector-emitter saturation voltage of 2V. Designed for through-hole mounting, it operates within a temperature range of -65°C to 150°C and has a maximum power dissipation of 65W. This RoHS compliant component is supplied in bulk packaging.
Onsemi TIP120 technical specifications.
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 4V |
| Continuous Collector Current | 5A |
| Current Rating | 5A |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 9.2mm |
| hFE Min | 1000 |
| Lead Free | Lead Free |
| Length | 9.9mm |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 65W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 65W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Weight | 1.214g |
| Width | 4.5mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi TIP120 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
