Medium power NPN Darlington bipolar junction transistor (BJT) in a TO-220-3 package. Features a collector-emitter voltage (VCEO) of 80V and a continuous collector current (IC) of 5A. Offers a high DC current gain (hFE) of 1000 minimum. Designed for medium power applications with a maximum power dissipation of 65W. RoHS compliant and lead-free.
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Onsemi TIP121G technical specifications.
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 4V |
| Continuous Collector Current | 5A |
| Current Rating | 5A |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 0.62inch |
| hFE Min | 1000 |
| Lead Free | Lead Free |
| Length | 0.404inch |
| Max Collector Current | 5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 2W |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 65W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 80V |
| Width | 0.19inch |
| RoHS | Compliant |
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