PNP bipolar junction transistor in a TO-220-3 package, featuring a collector-emitter breakdown voltage of 100V and a continuous collector current rating of 5A. This through-hole mounted device offers a high DC current gain (hFE) of 1000, a maximum power dissipation of 65W, and operates within a temperature range of -65°C to 150°C. It is RoHS compliant and designed for general-purpose amplification and switching applications.
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| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | -100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | -4V |
| Collector Emitter Voltage (VCEO) | -100V |
| Collector-emitter Voltage-Max | 4V |
| Continuous Collector Current | -5A |
| Current Rating | -5A |
| Emitter Base Voltage (VEBO) | -5V |
| Height | 9.15mm |
| hFE Min | 1000 |
| Lead Free | Lead Free |
| Length | 10.28mm |
| Max Collector Current | 5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 65W |
| Mount | Through Hole |
| Package Quantity | 200 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Power Dissipation | 65W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | -100V |
| Weight | 1.214g |
| Width | 4.6mm |
| RoHS | Compliant |
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