PNP Darlington Bipolar Junction Transistor (BJT) in a TO-247-3 package. Features a maximum collector-emitter voltage (VCEO) of 100V and a continuous collector current (IC) of 10A. Offers a maximum power dissipation of 125W and a collector-emitter saturation voltage (VCE(sat)) of 3V. Operates across a temperature range of -65°C to 150°C. This component is lead-free and RoHS compliant.
PackageTO-247-3
Current Rating-10A
PolarityPNP
Power125W
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Technical Specifications
Onsemi TIP147G technical specifications.
General
| Package/Case | TO-247-3 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 3V |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 3V |
| Current Rating | -10A |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 12.2mm |
| Lead Free | Lead Free |
| Length | 15.2mm |
| Max Collector Current | 10A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 125W |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Power Dissipation | 125W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | -100V |
| Weight | 0.229281oz |
| Width | 4.9mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi TIP147G Datasheet
Download the complete datasheet for Onsemi TIP147G to view detailed technical specifications.
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