The TIP147T is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 100V and a maximum collector current of 10A. It is packaged in a TO-220-3 package and is designed for through-hole mounting. The transistor has a maximum power dissipation of 80W and is RoHS compliant. It operates over a temperature range of -65°C to 150°C.
PackageTO-220-3
Current Rating-2A
MountingThrough Hole
PolarityPNP
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Technical Specifications
Onsemi TIP147T technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | -100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector-emitter Voltage-Max | 3V |
| Current Rating | -2A |
| Emitter Base Voltage (VEBO) | -5V |
| Height | 9.4mm |
| hFE Min | 1000 |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Collector Current | 10A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 80W |
| Mount | Through Hole |
| Package Quantity | 200 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 80W |
| RoHS Compliant | Yes |
| DC Rated Voltage | -100V |
| Weight | 1.214g |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi TIP147T Datasheet
Download the complete datasheet for Onsemi TIP147T to view detailed technical specifications.
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