The TIP147TU is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 100V and a maximum collector current of 10A. It has a maximum power dissipation of 80W and operates over a temperature range of -65°C to 150°C. The transistor is packaged in a TO-3P, 3 PIN package and is available in a lead-free version. It is RoHS compliant and suitable for use in a variety of applications.
Current Rating-10A
MountingThrough Hole
PolarityPNP
Power80W
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Technical Specifications
Onsemi TIP147TU technical specifications.
General
| Collector Base Voltage (VCBO) | -100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 3V |
| Current Rating | -10A |
| Emitter Base Voltage (VEBO) | -5V |
| hFE Min | 1000 |
| Lead Free | Lead Free |
| Max Collector Current | 10A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 80W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Power Dissipation | 80W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | -100V |
| Weight | 6.401g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi TIP147TU Datasheet
Download the complete datasheet for Onsemi TIP147TU to view detailed technical specifications.
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