PNP Bipolar Junction Transistor (BJT) with a -60V collector-emitter breakdown voltage and a -15A maximum collector current. Features a 60V collector-emitter voltage and 1.1V collector-emitter saturation voltage. Operates with a 2.5MHz frequency and a minimum hFE of 20. Housed in a SOT-93 package, this single-element transistor offers 90W power dissipation and is rated for operation between -65°C and 150°C.
Frequency2.5MHz
PackageSOT-93
Current Rating-15A
PolarityPNP
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Technical Specifications
Onsemi TIP2955 technical specifications.
General
| Package/Case | SOT-93 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | -60V |
| Collector Emitter Saturation Voltage | 1.1V |
| Collector Emitter Voltage (VCEO) | 60V |
| Current Rating | -15A |
| Element Configuration | Single |
| Emitter Base Voltage (VEBO) | 7V |
| Frequency | 2.5MHz |
| Gain Bandwidth Product | 2.5MHz |
| hFE Min | 20 |
| Lead Free | Lead Free |
| Max Collector Current | 15A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 90W |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Power Dissipation | 90W |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | No |
| DC Rated Voltage | -100V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi TIP2955 Datasheet
Download the complete datasheet for Onsemi TIP2955 to view detailed technical specifications.
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