PNP Bipolar Junction Transistor (BJT) in a TO-247-3 package, designed for power applications. Features a maximum collector current of 15A and a collector-emitter breakdown voltage of 60V. Offers a maximum power dissipation of 90W and a transition frequency of 2.5MHz. This lead-free and RoHS compliant component operates within a temperature range of -65°C to 150°C.
Frequency2.5MHz
PackageTO-247-3
Current Rating-15A
PolarityPNP
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Technical Specifications
Onsemi TIP2955G technical specifications.
General
| Package/Case | TO-247-3 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 1.1V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 3V |
| Current Rating | -15A |
| Emitter Base Voltage (VEBO) | 7V |
| Frequency | 2.5MHz |
| Gain Bandwidth Product | 2.5MHz |
| hFE Min | 20 |
| Lead Free | Lead Free |
| Max Collector Current | 15A |
| Max Frequency | 2.5MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 90W |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Power Dissipation | 90W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 2.5MHz |
| DC Rated Voltage | -60V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi TIP2955G Datasheet
Download the complete datasheet for Onsemi TIP2955G to view detailed technical specifications.
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