NPN Bipolar Junction Power Transistor, TO-220-3 package, featuring a maximum collector current of 1A and a collector-emitter breakdown voltage of 60V. This through-hole mounted component offers a minimum DC current gain (hFE) of 15 and a transition frequency of 3MHz. With a maximum power dissipation of 2W and an operating temperature range from -65°C to 150°C, it is RoHS compliant.
PackageTO-220-3
Current Rating1A
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi TIP29A technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 700mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 700mV |
| Current Rating | 1A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 3MHz |
| hFE Min | 15 |
| Lead Free | Lead Free |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 2W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Bulk |
| Polarity | NPN |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 3MHz |
| DC Rated Voltage | 100V |
| Weight | 1.214g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi TIP29A Datasheet
Download the complete datasheet for Onsemi TIP29A to view detailed technical specifications.
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