NPN bipolar junction transistor (BJT) in a TO-220 package, designed for through-hole mounting. Features a maximum collector current of 1A and a collector-emitter breakdown voltage of 60V. Offers a minimum DC current gain (hFE) of 15 and a transition frequency of 3MHz. Operates within a temperature range of -65°C to 150°C with a power dissipation of 2W. This component is lead-free and RoHS compliant.
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Onsemi TIP29ATU technical specifications.
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 700mV |
| Current Rating | 1A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 3MHz |
| Gain Bandwidth Product | 3MHz |
| hFE Min | 15 |
| Lead Free | Lead Free |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 2W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 2W |
| RoHS Compliant | Yes |
| Transition Frequency | 3MHz |
| DC Rated Voltage | 60V |
| RoHS | Compliant |
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