NPN bipolar junction transistor (BJT) for through-hole mounting in a TO-220 package. Features a maximum collector-emitter voltage of 100V, maximum DC collector current of 1A, and maximum power dissipation of 2000mW. Operates across a wide temperature range from -65°C to 150°C, with a minimum DC current gain of 40 at 200mA/4V. This single-element silicon transistor is designed for automotive applications.
PackageTO-220
MountingThrough Hole
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Technical Specifications
Onsemi TIP29C technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-220 |
| Package/Case | TO-220 |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.67(Max) |
| Package Width (mm) | 4.7(Max) |
| Package Height (mm) | 9.4(Max) |
| Seated Plane Height (mm) | 20.4(Max) |
| Pin Pitch (mm) | 2.67(Max) |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | TO-220AB |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 100V |
| Maximum Emitter Base Voltage | 5V |
| Maximum Collector-Emitter Voltage | 100V |
| Maximum DC Collector Current | 1A |
| Maximum Power Dissipation | 2000mW |
| Material | Si |
| Minimum DC Current Gain | 40@200mA@4V|15@1A@4V |
| Maximum Transition Frequency | 3(Min)MHz |
| Category | Bipolar Power |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 5V1P1 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | Yes |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Onsemi TIP29C Datasheet
Download the complete datasheet for Onsemi TIP29C to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.