The TIP3055 is a high-power NPN bipolar junction transistor with a collector-emitter breakdown voltage of 60V and a maximum collector current of 15A. It features a high gain bandwidth product of 2.5MHz and a maximum power dissipation of 90W. The transistor is packaged in a TO-218-3 case and is suitable for operation over a temperature range of -65°C to 150°C.
PackageTO-218-3
Current Rating15A
PolarityNPN
Power90W
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Technical Specifications
Onsemi TIP3055 technical specifications.
General
| Package/Case | TO-218-3 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 1.1V |
| Collector-emitter Voltage-Max | 3V |
| Current Rating | 15A |
| Emitter Base Voltage (VEBO) | 7V |
| Gain Bandwidth Product | 2.5MHz |
| hFE Min | 20 |
| Lead Free | Lead Free |
| Max Collector Current | 15A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 90W |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 90W |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | No |
| Transition Frequency | 2.5MHz |
| DC Rated Voltage | 100V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi TIP3055 Datasheet
Download the complete datasheet for Onsemi TIP3055 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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