PNP bipolar junction transistor in a TO-220 package, featuring a 60V collector-emitter breakdown voltage and a 1A maximum collector current. This through-hole component offers a minimum DC current gain (hFE) of 15 and a transition frequency of 3MHz. With a maximum power dissipation of 2W and an operating temperature range of -65°C to 150°C, it is RoHS compliant and lead-free.
Frequency3MHz
PackageTO-220-3
Current Rating-1A
MountingThrough Hole
Quick Jump:
Technical Specifications
Onsemi TIP30ATU technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 700mV |
| Current Rating | -1A |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 3MHz |
| Gain Bandwidth Product | 3MHz |
| hFE Min | 15 |
| Lead Free | Lead Free |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 2W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Power Dissipation | 2W |
| RoHS Compliant | Yes |
| Series | TIP30 |
| Transition Frequency | 3MHz |
| DC Rated Voltage | -60V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi TIP30ATU Datasheet
Download the complete datasheet for Onsemi TIP30ATU to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
