PNP bipolar junction transistor in a TO-220 package, featuring a 60V collector-emitter breakdown voltage and a 1A maximum collector current. This through-hole component offers a minimum DC current gain (hFE) of 15 and a transition frequency of 3MHz. With a maximum power dissipation of 2W and an operating temperature range of -65°C to 150°C, it is RoHS compliant and lead-free.
Sign in to ask questions about the Onsemi TIP30ATU datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Onsemi TIP30ATU technical specifications.
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 700mV |
| Current Rating | -1A |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 3MHz |
| Gain Bandwidth Product | 3MHz |
| hFE Min | 15 |
| Lead Free | Lead Free |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 2W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Power Dissipation | 2W |
| RoHS Compliant | Yes |
| Series | TIP30 |
| Transition Frequency | 3MHz |
| DC Rated Voltage | -60V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi TIP30ATU to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
