
NPN bipolar power transistor featuring a 40V collector-emitter breakdown voltage and a maximum collector current of 3A. This component offers a minimum DC current gain (hFE) of 25 and a transition frequency of 3MHz. Packaged in a TO-220-3 configuration, it supports a maximum power dissipation of 2W and operates within a temperature range of -65°C to 150°C. RoHS compliant and lead-free.
Onsemi TIP31G technical specifications.
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 1.2V |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 1.2V |
| Current Rating | 3A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 3MHz |
| Gain Bandwidth Product | 3MHz |
| Height | 0.62inch |
| hFE Min | 25 |
| Lead Free | Lead Free |
| Length | 0.404inch |
| Max Collector Current | 3A |
| Max Frequency | 3MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 2W |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 3MHz |
| DC Rated Voltage | 40V |
| Width | 0.19inch |
| RoHS | Compliant |
Download the complete datasheet for Onsemi TIP31G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
