PNP Bipolar Junction Transistor (BJT) in TO-220AB package. Features a 60V collector-emitter breakdown voltage and a 3A maximum collector current. Offers a minimum DC current gain (hFE) of 10 and a transition frequency of 3MHz. Designed for through-hole mounting with a maximum power dissipation of 2W. Operates across a wide temperature range from -65°C to 150°C and is RoHS compliant.
Frequency3MHz
PackageTO-220AB
Current Rating-3A
MountingThrough Hole
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Technical Specifications
Onsemi TIP32A technical specifications.
General
| Package/Case | TO-220AB |
| Collector Base Voltage (VCBO) | -60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 1.2V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 1.2V |
| Current Rating | -3A |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 3MHz |
| Gain Bandwidth Product | 3MHz |
| hFE Min | 10 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 3A |
| Max Frequency | 3MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 2W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 3MHz |
| DC Rated Voltage | -60V |
| Weight | 1.214g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi TIP32A Datasheet
Download the complete datasheet for Onsemi TIP32A to view detailed technical specifications.
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