High power NPN bipolar junction transistor in a TO-247-3 package. Features a maximum collector current of 10A and a collector-emitter voltage of 100V. Offers a minimum DC current gain (hFE) of 40 and a transition frequency of 3MHz. With a maximum power dissipation of 80W, this transistor operates within a temperature range of -65°C to 150°C and is RoHS compliant. Packaged in a 30-unit rail/tube.
Frequency3MHz
PackageTO-247-3
Current Rating10A
PolarityNPN
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Technical Specifications
Onsemi TIP33CG technical specifications.
General
| Package/Case | TO-247-3 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 4V |
| Current Rating | 10A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 3MHz |
| Gain Bandwidth Product | 3MHz |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Max Collector Current | 10A |
| Max Frequency | 3MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 80W |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 80W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 3MHz |
| DC Rated Voltage | 100V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi TIP33CG Datasheet
Download the complete datasheet for Onsemi TIP33CG to view detailed technical specifications.
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