
NPN Bipolar Junction Transistor (BJT) in TO-247 package. Features a 100V collector-emitter breakdown voltage, 25A continuous collector current, and 125W power dissipation. Offers a minimum DC current gain (hFE) of 25 and a transition frequency of 3MHz. Operates within a temperature range of -65°C to 150°C. This RoHS compliant component is supplied in a 30-piece tube.
Onsemi TIP35CG technical specifications.
| Package/Case | TO-247-3 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 1.8V |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 4V |
| Current Rating | 25A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 3MHz |
| Gain Bandwidth Product | 3MHz |
| Height | 0.801inch |
| hFE Min | 25 |
| Lead Free | Lead Free |
| Length | 0.599inch |
| Max Collector Current | 25A |
| Max Frequency | 3MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 125W |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 125W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 3MHz |
| DC Rated Voltage | 100V |
| Width | 0.193inch |
| RoHS | Compliant |
Download the complete datasheet for Onsemi TIP35CG to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
