NPN Bipolar Junction Transistor (BJT) in TO-247 package. Features a 100V collector-emitter breakdown voltage, 25A continuous collector current, and 125W power dissipation. Offers a minimum DC current gain (hFE) of 25 and a transition frequency of 3MHz. Operates within a temperature range of -65°C to 150°C. This RoHS compliant component is supplied in a 30-piece tube.
Frequency3MHz
PackageTO-247-3
Current Rating25A
PolarityNPN
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Technical Specifications
Onsemi TIP35CG technical specifications.
General
Package/Case
TO-247-3
Collector Base Voltage (VCBO)
100V
Collector Emitter Breakdown Voltage
100V
Collector Emitter Saturation Voltage
1.8V
Collector Emitter Voltage (VCEO)
100V
Collector-emitter Voltage-Max
4V
Current Rating
25A
Emitter Base Voltage (VEBO)
5V
Frequency
3MHz
Gain Bandwidth Product
3MHz
Height
0.801inch
hFE Min
25
Lead Free
Lead Free
Length
0.599inch
Max Collector Current
25A
Max Frequency
3MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
125W
Number of Elements
1
Package Quantity
30
Packaging
Rail/Tube
Polarity
NPN
Power Dissipation
125W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
3MHz
DC Rated Voltage
100V
Width
0.193inch
Compliance
RoHS
Compliant
Datasheet
Onsemi TIP35CG Datasheet
Download the complete datasheet for Onsemi TIP35CG to view detailed technical specifications.
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