
PNP Bipolar Junction Transistor (BJT) in a TO-220 package, featuring a maximum collector current of 6A and a collector-emitter breakdown voltage of 40V. This through-hole mounted transistor offers a minimum DC current gain (hFE) of 15 and a transition frequency of 3MHz. With a maximum power dissipation of 2W and an operating temperature range of -65°C to 150°C, it is RoHS compliant and lead-free.
Onsemi TIP42 technical specifications.
| Package/Case | TO-220 |
| Collector Base Voltage (VCBO) | -40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 1.5V |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 1.5V |
| Current Rating | -6A |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 3MHz |
| Gain Bandwidth Product | 3MHz |
| hFE Min | 15 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 6A |
| Max Frequency | 3MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 2W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 3MHz |
| DC Rated Voltage | -40V |
| Weight | 1.214g |
| RoHS | Compliant |
Download the complete datasheet for Onsemi TIP42 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
