PNP Bipolar Junction Transistor (BJT) in TO-220-3 package. Features a collector-emitter voltage of -100V, maximum collector current of 6A, and a power dissipation of 65W. Offers a minimum DC current gain (hFE) of 30 and a transition frequency of 3MHz. Operates within a temperature range of -65°C to 150°C.
Frequency3MHz
PackageTO-220-3
Current Rating-6A
PolarityPNP
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Technical Specifications
Onsemi TIP42C technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 1.5V |
| Collector Emitter Voltage (VCEO) | -100V |
| Collector-emitter Voltage-Max | 1.5V |
| Current Rating | -6A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 3MHz |
| Height | 16.51mm |
| hFE Min | 30 |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Breakdown Voltage | 100V |
| Max Collector Current | 6A |
| Max Frequency | 3MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 65W |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Power Dissipation | 65W |
| Reach SVHC Compliant | No |
| Transition Frequency | 3MHz |
| DC Rated Voltage | -100V |
| Weight | 0.042823oz |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi TIP42C Datasheet
Download the complete datasheet for Onsemi TIP42C to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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