PNP Epitaxial Silicon Transistor, TO-220-3 package. Features a collector-emitter voltage of 100V, a continuous collector current of 6A, and a transition frequency of 3MHz. Offers a minimum DC current gain (hFE) of 15 and a maximum power dissipation of 2W. Operates within a temperature range of -65°C to 150°C. Through-hole mount, lead-free, and RoHS compliant.
Frequency3MHz
PackageTO-220-3
Current Rating-6A
MountingThrough Hole
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Technical Specifications
Onsemi TIP42CTU technical specifications.
General
Package/Case
TO-220-3
Collector Base Voltage (VCBO)
-100V
Collector Emitter Breakdown Voltage
100V
Collector Emitter Saturation Voltage
-1.5V
Collector Emitter Voltage (VCEO)
100V
Collector-emitter Voltage-Max
1.5V
Current Rating
-6A
Emitter Base Voltage (VEBO)
-5V
Frequency
3MHz
Gain Bandwidth Product
3MHz
Height
16.51mm
hFE Min
15
Lead Free
Lead Free
Length
10.67mm
Max Collector Current
6A
Max Frequency
3MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
2W
Mount
Through Hole
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
PNP
Power Dissipation
2W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
3MHz
DC Rated Voltage
-100V
Weight
1.214g
Width
4.83mm
Compliance
RoHS
Compliant
Datasheet
Onsemi TIP42CTU Datasheet
Download the complete datasheet for Onsemi TIP42CTU to view detailed technical specifications.
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