
NPN Bipolar Junction Transistor (BJT) for power applications. Features a 250V collector-emitter voltage (VCEO) and a 1A maximum collector current. Offers a 10MHz transition frequency and a minimum hFE of 30. Packaged in a TO-220-3 through-hole mount with a 2W power dissipation. RoHS compliant and lead-free.
Onsemi TIP47TU technical specifications.
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 350V |
| Collector Emitter Breakdown Voltage | 250V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 250V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | 1A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 10MHz |
| Gain Bandwidth Product | 10MHz |
| Height | 16.51mm |
| hFE Min | 30 |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Collector Current | 1A |
| Max Frequency | 10MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 2W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 10MHz |
| DC Rated Voltage | 250V |
| Weight | 1.214g |
| Width | 4.83mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi TIP47TU to view detailed technical specifications.
No datasheet is available for this part.
