
NPN Bipolar Junction Transistor (BJT) in a TO-220-3 package. Features a 300V collector-emitter voltage (VCEO) and a 1A maximum collector current. Offers a transition frequency of 10MHz and a minimum hFE of 30. Operates within a temperature range of -65°C to 150°C with a maximum power dissipation of 40W. This lead-free, RoHS-compliant component is supplied in a 50-piece tube.
Onsemi TIP48G technical specifications.
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 400V |
| Collector Emitter Breakdown Voltage | 300V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 300V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | 1A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 10MHz |
| Gain Bandwidth Product | 10MHz |
| Height | 0.62inch |
| hFE Min | 30 |
| Lead Free | Lead Free |
| Length | 0.404inch |
| Max Collector Current | 1A |
| Max Frequency | 10MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 2W |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 40W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 10MHz |
| DC Rated Voltage | 300V |
| Width | 0.19inch |
| RoHS | Compliant |
Download the complete datasheet for Onsemi TIP48G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
