NPN silicon bipolar junction transistor (BJT) in a TO-220 package. Features a 350V collector-emitter breakdown voltage (VCEO) and a 450V collector-base voltage (VCBO). Offers a continuous collector current rating of 1A and a maximum power dissipation of 2W. Operates with a transition frequency of 10MHz and a minimum DC current gain (hFE) of 30. Through-hole mounting design, RoHS compliant, and suitable for operation between -65°C and 150°C.
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Onsemi TIP49 technical specifications.
| Package/Case | TO-220 |
| Collector Base Voltage (VCBO) | 450V |
| Collector Emitter Breakdown Voltage | 350V |
| Collector Emitter Voltage (VCEO) | 350V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | 1A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 10MHz |
| Gain Bandwidth Product | 10MHz |
| hFE Min | 30 |
| Lead Free | Lead Free |
| Max Collector Current | 1A |
| Max Frequency | 10MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 2W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 200 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 10MHz |
| DC Rated Voltage | 350V |
| Weight | 1.214g |
| RoHS | Compliant |
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