The TN2907A is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 60V and a maximum collector current of 800mA. It has a maximum power dissipation of 625mW and operates over a temperature range of -55°C to 150°C. The transistor is packaged in a TO-226 case and is available in a lead-free version. It is suitable for use in a variety of applications, including general-purpose switching and amplification.
PackageTO-226
Current Rating-800mA
MountingThrough Hole
PolarityPNP
Quick Jump:
Technical Specifications
Onsemi TN2907A technical specifications.
General
| Package/Case | TO-226 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 1.6V |
| Current Rating | -800mA |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Max Collector Current | 800mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1500 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 625mW |
| Radiation Hardening | No |
| Series | TN2907 |
| DC Rated Voltage | -60V |
| Weight | 0.25g |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Onsemi TN2907A Datasheet
Download the complete datasheet for Onsemi TN2907A to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.